Introduction of IGBT

Introduction of IGBT

Tags: Introduction of IGBT, Theory of switching characteristics of IGBT, Characteristics of IGBT,,
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To study the characteristics of switching device in Power Electronics.

VI Characteristics of IGBT

The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device noted for high efficiency and fast switching. It is a unidirectional, bipolar device.

Operation of IGBT

  • When gate terminal is kept open there will not be any current flow due to n- layer.
  • When gate terminal is kept positive potential with respect to emitter, the negative charge is induced in n- layer due to capacitor action.
  • Thus the current flows from emitter to collector through the path shown in figure.
  • When gate voltage is increased current flow through the device will also increase.

Output characteristics

  • It shows relation between VCE & IC.
  • When VCE is increased, IC also increases, even if VCE increases furthermore, the IC remains constant.

Transfer characteristics


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