To study the characteristics of switching device in Power Electronics.
VI Characteristics of IGBT
The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device noted for high efficiency and fast switching. It is a unidirectional, bipolar device.
Operation of IGBT
☞When gate terminal is kept open there will not be any current flow due to n- layer.
☞When gate terminal is kept positive potential with respect to emitter, the negative charge is induced in n- layer due to capacitor action.
☞Thus the current flows from emitter to collector through the path shown in figure.
☞When gate voltage is increased current flow through the device will also increase.
☞It shows relation between VCE & IC.
☞When VCE is increased, IC also increases, even if VCE increases furthermore, the IC remains constant.