Introduction of IGBT

Spread the love


To study the characteristics of switching device in Power Electronics.

VI Characteristics of IGBT

The Insulated Gate Bipolar Transistor (IGBT) is a three-terminal power semiconductor device noted for high efficiency and fast switching. It is a unidirectional, bipolar device.

symbol of igbt

Operation of IGBT

operation diagram of igbt

☞When gate terminal is kept open there will not be any current flow due to n- layer.

☞When gate terminal is kept positive potential with respect to emitter, the negative charge is induced in n- layer due to capacitor action.

☞Thus the current flows from emitter to collector through the path shown in figure.

☞When gate voltage is increased current flow through the device will also increase.

Output characteristics

ouput charecteristics of igbt

☞It shows relation between VCE & IC.

☞When VCE is increased, IC also increases, even if VCE increases furthermore, the IC remains constant.

Transfer characteristics

transfer charecteristics og igbt

Leave a Reply

Your email address will not be published. Required fields are marked *

one × 3 =

This site uses Akismet to reduce spam. Learn how your comment data is processed.